Mostrar 1 - 20 resultats de 90 per cerca 'Ming-Jer Chen', hora de la petició: 0.16sec Refinar resultats
  1. 1
    Nanoscale MOSFETs Channel Backscattering: Monte Carlo Simulation and Physical Model
    per Ming-Jer Chen
    Publicat 2008
    Altres autors: “...Ming-Jer Chen...”
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  2. 2
    Gate Direct Tunneling and Edge Direct Tunneling Experiment in n-MOSFETs under Longitudinal and Transverse Stress
    per Ming-Jer Chen
    Publicat 2008
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  3. 3
    Backscattering-Oriented MOSFET Mismatch Experiment
    per Ming-Jer Chen
    Publicat 2008
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  4. 4
    Matching Properties of Nanoscale MOSFETs
    per Ming-Jer Chen
    Publicat 2008
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  5. 5
    Physics-Based Calculation of Hole Inversion-Layer Mobility in pMOSFETs
    per Ming-Jer Chen
    Publicat 2008
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  6. 6
    Strained Silicon Physics in Nanoscale MOSFETs
    per Ming-Jer, Chen
    Publicat 2008
    Altres autors: “...Ming-Jer, Chen...”
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  7. 7
    Accurate Parameter Extraction Methods for Highly Scaled MOSFETs
    per Ming-Jer Chen
    Publicat 2008
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  8. 8
    Study on the Atomic-sized Traps in Advanced Devices
    per Ming-Jer Chen
    Publicat 2006
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  9. 9
    Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
    per Ming-Jer Chen
    Publicat 2006
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  10. 10
    A MOSFET Saturation Current Mismatch Model Based on Backscattering Theory
    per Ming-Jer Chen
    Publicat 2006
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  11. 11
    Back-Gate Bias Control on Subthreshold Circuit Mismatch and its Physical Model
    per Ming-Jer Chen
    Publicat 2006
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  12. 12
    Low Voltage Trap-to-Trap Tunneling (TTT) in PMOSFETs with Ultrathin Oxides
    per Ming-Jer Chen
    Publicat 2001
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  13. 13
    Characterization, Analysis, and Parameter Extraction of Flash Memories
    per Ming-Jer Chen
    Publicat 2001
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  14. 14
    Novel Experimental Observations of Quantum Yield and Soft Breakdown in Ultrathin Gate Oxide MOSFETs
    per Ming-Jer Chen
    Publicat 2001
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  15. 15
    Physical Models for Epitaxial CMOS Latch-up and On-chip ESD Protection
    per Ming-Jer Chen
    Publicat 2001
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  16. 16
    A study on Channel Initiated Secondary Electron Gate Current in Deep Submicron MOSFET's
    per Ming-Jer Chen
    Publicat 1999
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  17. 17
    CMOS-Compatible High-Gain Gated Lateral Bipolar Transistors: Characterization, Modeling, and Applications
    per Ming-Jer Chen
    Publicat 1995
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  18. 18
    Accurate Modeling of Back-Gate Bias and Temperature Effect in Weakly Inverted MOSFETs
    per Ming-Jer Chen
    Publicat 1995
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  19. 19
    Back-Gate Forward Bias Scheme for Low Supply-Voltage CMOS Digital Circuit
    per Ming-Jer Chen
    Publicat 1995
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  20. 20
    Current-Pulse Induced Degradation in Submicron MOSFETs and SCR Latch-up for ESD Prevention
    per Ming-Jer Chen
    Publicat 1995
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