A 5.2 GHz SiGe/Si HBT-Based MMIC Power Amplifier
碩士 === 南台科技大學 === 電子工程系 === 92 === In this thesis we design key devices of 5.2GHz ISM band. We use the SiGe transistor to fabricate high frequency devices and support suitable characters in our operation frequency. The devices that we research are the most important devices in RF frond en...
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| Main Authors: | , |
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| Outros Autores: | |
| Formato: | 50 Online |
| Idioma: | en_US |
| Publicado em: |
2004
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| Acesso em linha: | http://ndltd.ncl.edu.tw/handle/86504921059583705219 |
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