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Modeling and simulation of Cu diffusion and drift in porous CMOS backend dielectrics
With the advent of porous dielectrics, Cu drift-diffusion reliability issues in CMOS backend have only been exacerbated. In this regard, a modeling and simulation study of Cu atom/ion drift-diffusion in porous dielectrics is presented to assess the backend reliability and to explore conditions for a...
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| Udgivet i: | APL Materials |
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| Main Authors: | , , , |
| Format: | Artigo |
| Udgivet: |
AIP Publishing LLC
2018-06-01
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| Online adgang: | http://dx.doi.org/10.1063/1.5021032 |
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